MD7IC18120NR1【PDF 4/18 页】IC PWR AMP RF LDMOS TO270-16

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Table 5. Electrical Characteristics (T A = 25 ° C unless otherwise noted) (continued)

Typical Broadband Performance (1) (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1A = 70 mA, I DQ1B = 160 mA, I DQ2B =

500 mA, V GS2A = 1.7 Vdc, P out = 30 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ± 5 MHz Offset.

Frequency

1805 MHz

1840 MHz

1880 MHz

G ps

(dB)

25.7

25.7

25.8

PAE

(%)

36.7

36.3

35.3

Output PAR

(dB)

6.9

6.9

6.7

(In Freescale Doherty Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ1A = 70 mA, I DQ1B = 160 mA,

Typical Performances

(1)

I DQ2B = 500 mA, V GS2A = 1.7 Vdc, 1805--1880 MHz Bandwidth

Characteristic

P out @ 1 dB Compression Point, CW

IMD Symmetry @ 30 W PEP, P out where IMD Third Order

Intermodulation ? 30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Symbol

P1dB

IMD sym

Min

—

—

Typ

120

15

Max

—

—

Unit

W

MHz

Sidebands > 2 dB)

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 75 MHz Bandwidth @ P out = 30 W Avg.

VBW res

G F

—

—

35

0.3

—

—

MHz

dB

Quiescent Current Accuracy over Temperature

with 2 k ? Gate Feed Resistors (--30 to 85 ° C) (2)

Gain Variation over Temperature

(--30 ° C to +85 ° C)

Output Power Variation over Temperature

(--30 ° C to +85 ° C)

Stage 1

Stage 2

? I QT

? G

? P1dB

—

—

—

4.26

5.04

0.04

0.04

—

—

—

%

dB/ ° C

dBm/ ° C

1. Measurement made with device in a Symmetrical Doherty configuration.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family . Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or

AN1987.

MD7IC18120NR1 MD7IC18120GNR1

4

RF Device Data

Freescale Semiconductor

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